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SurPass Photoresist Adhesion PromoterOur SurPass photoresist adhesion promoter is designed to support resist adhesion and coating quality across a broad range of substrate materials used in photon and electron beam lithography. At DisChem, we offer SurPass cationic adhesion promoters and priming agents as part of our microlithography chemistry portfolio. With waterborne formulations available, we give process engineers a practical...0 Комментарии 0 Поделились 26 Просмотры 0 предпросмотрВойдите, чтобы отмечать, делиться и комментировать!
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Hydrogen Silsesquioxane Electron-Beam ResistOur hydrogen silsesquioxane electron-beam resist, H-SiQ, is a negative-tone resist developed for electron beam lithography applications. At DisChem, we formulate H-SiQ from dry silica resin in a semiconductor-grade MIBK carrier solvent. It is designed for direct-write thin-film EBL applications and is characterized by pitch resolution, sensitivity, and etch resistance. We provide H-SiQ as a...0 Комментарии 0 Поделились 25 Просмотры 0 предпросмотр
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Electron Beam Anti-Charge AgentAt DisChem, our electron beam anti-charge agent solutions help address charge accumulation on electrically insulated substrates during electron beam lithography. Our DisCharge chemistry is specifically developed for this purpose, supporting more controlled EBL processing. We understand that charging can affect demanding lithography applications, so we focus on specialized chemistry for micro-...0 Комментарии 0 Поделились 27 Просмотры 0 предпросмотр
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Hydrogen Silsesquioxane EBL ResistOur hydrogen silsesquioxane EBL resist, H-SiQ, is developed for direct-write electron beam lithography where high-resolution patterning is essential. We formulate this negative-tone resist using hydrogen silsesquioxane resin in semiconductor-grade MIBK. H-SiQ provides a combination of pitch resolution, sensitivity, and etch resistance for demanding thin-film applications. We offer multiple...0 Комментарии 0 Поделились 499 Просмотры 0 предпросмотр
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E-Beam Lithography Charge Dissipation AgentOur E-Beam Lithography Charge Dissipation Agent, DisCharge H2O, helps address charge accumulation when electron beam lithography is performed on electrically insulating substrates. We developed this water-based material to create a conductive layer over the resist, helping accumulated electrons dissipate during exposure. This can support improved pattern fidelity and positional accuracy....0 Комментарии 0 Поделились 529 Просмотры 0 предпросмотр
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Sulfamate Nickel Plating SolutionFor high-precision electroforming, our E-Form sulfamate nickel plating solution is the industry standard. At DisChem, we manufacture our plating chemistries under strict quality controls to ensure ultra-low internal stress and exceptional ductility. Whether you are replicating optical media, fabricating micro-devices, or creating complex molds, our sulfamate nickel plating solution guarantees a...0 Комментарии 0 Поделились 740 Просмотры 0 предпросмотр
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Direct Write Electron Beam LithographyAre you pushing the limits of nanoscale fabrication? Our advanced chemical solutions at DisChem are meticulously engineered to support direct write electron beam lithography processes. This maskless patterning technique requires absolute accuracy, and we provide the critical adhesion promoters and anti-charging agents needed to maintain beam stability. By optimizing your direct write electron...0 Комментарии 0 Поделились 717 Просмотры 0 предпросмотр
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Hydrogen Silsesquioxane Electron-Beam ResistAt DisChem, we offer high-performance hydrogen silsesquioxane electron-beam resist solutions, such as our premium H-SiQ resist. Specially formulated for high-resolution nanolithography, this negative-tone resist delivers unmatched pattern fidelity for features down to the sub-10 nm range. By choosing our hydrogen silsesquioxane electron-beam resist, you ensure your advanced semiconductor...0 Комментарии 0 Поделились 702 Просмотры 0 предпросмотр
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