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Hydrogen Silsesquioxane EBL ResistOur hydrogen silsesquioxane EBL resist, H-SiQ, is developed for direct-write electron beam lithography where high-resolution patterning is essential. We formulate this negative-tone resist using hydrogen silsesquioxane resin in semiconductor-grade MIBK. H-SiQ provides a combination of pitch resolution, sensitivity, and etch resistance for demanding thin-film applications. We offer multiple...0 Comments 0 Shares 230 Views 0 ReviewsPlease log in to like, share and comment!
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E-Beam Lithography Charge Dissipation AgentOur E-Beam Lithography Charge Dissipation Agent, DisCharge H2O, helps address charge accumulation when electron beam lithography is performed on electrically insulating substrates. We developed this water-based material to create a conductive layer over the resist, helping accumulated electrons dissipate during exposure. This can support improved pattern fidelity and positional accuracy....0 Comments 0 Shares 247 Views 0 Reviews
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Sulfamate Nickel Plating SolutionFor high-precision electroforming, our E-Form sulfamate nickel plating solution is the industry standard. At DisChem, we manufacture our plating chemistries under strict quality controls to ensure ultra-low internal stress and exceptional ductility. Whether you are replicating optical media, fabricating micro-devices, or creating complex molds, our sulfamate nickel plating solution guarantees a...0 Comments 0 Shares 582 Views 0 Reviews
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Direct Write Electron Beam LithographyAre you pushing the limits of nanoscale fabrication? Our advanced chemical solutions at DisChem are meticulously engineered to support direct write electron beam lithography processes. This maskless patterning technique requires absolute accuracy, and we provide the critical adhesion promoters and anti-charging agents needed to maintain beam stability. By optimizing your direct write electron...0 Comments 0 Shares 573 Views 0 Reviews
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Hydrogen Silsesquioxane Electron-Beam ResistAt DisChem, we offer high-performance hydrogen silsesquioxane electron-beam resist solutions, such as our premium H-SiQ resist. Specially formulated for high-resolution nanolithography, this negative-tone resist delivers unmatched pattern fidelity for features down to the sub-10 nm range. By choosing our hydrogen silsesquioxane electron-beam resist, you ensure your advanced semiconductor...0 Comments 0 Shares 539 Views 0 Reviews
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