Our hydrogen silsesquioxane electron-beam resist, H-SiQ, is a negative-tone resist developed for electron beam lithography applications. At DisChem, we formulate H-SiQ from dry silica resin in a semiconductor-grade MIBK carrier solvent. It is designed for direct-write thin-film EBL applications and is characterized by pitch resolution, sensitivity, and etch resistance. We provide H-SiQ as a specialized resist option for customers working with advanced micro- and nanofabrication processes.
English
Arabic
French
Spanish
Portuguese
Deutsch
Turkish
Dutch
Italiano
Russian
Romaian
Portuguese (Brazil)
