Our hydrogen silsesquioxane EBL resist, H-SiQ, is developed for direct-write electron beam lithography where high-resolution patterning is essential. We formulate this negative-tone resist using hydrogen silsesquioxane resin in semiconductor-grade MIBK. H-SiQ provides a combination of pitch resolution, sensitivity, and etch resistance for demanding thin-film applications. We offer multiple concentrations, helping customers choose a formulation that suits their required film thickness and advanced micro- and nanofabrication process.
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